d a t a sh eet product data sheet supersedes data of 1999 may 11 2003 mar 25 discrete semiconductors BAV170 low-leakage double diode bo ok, halfpage m3d088
2003 mar 25 2 nxp semiconductors product data sheet low-leakage double diode BAV170 features ? plastic smd package ? low leakage current: typ. 3 pa ? switching time: typ. 0.8 s ? continuous reverse voltage: max. 75 v ? repetitive peak reverse voltage: max. 85 v ? repetitive peak forward current: max. 500 ma. application ? low-leakage current applications in surface mounted circuits. description epitaxial, medium-s peed switching, double diode in a small sot23 plastic smd package. the diodes are in common cathode configuration. pinning pin description 1 anode 2 anode 3 common cathode fig.1 simplified outline (sot23) and symbol. handbook, 4 columns 21 3 top view mam108 21 3 marking note 1. ? = p : made in hong kong. ? = t : made in malaysia. ? = w : made in china. type number marking code (1) BAV170 jx*
2003 mar 25 3 nxp semico nductors product data sheet low-leakage double diode BAV170 limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on a fr4 printed-circuit board. electrical characteristics t j = 25 c unless otherw ise specified. symbol parameter conditions min. max. unit per diode v rrm repetitive peak reverse voltage ? 85 v v r continuous reverse voltage ? 75 v i f continuous forward current single diode loaded; note 1; see fig.2 ? 215 ma double diode loaded; note 1; see fig.2 ? 125 ma i frm repetitive peak forward current ? 500 ma i fsm non-repetitive peak forward current square wave; t j = 25 c prior to surge; see fig.4 t p = 1 s ? 4 a t p = 1 ms ? 1 a t p = 1 s ? 0.5 a p tot total power dissipation t amb = 25 c; note 1 ? 250 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c symbol parameter conditions typ. max. unit per diode v f forward voltage see fig.3 i f = 1 ma ? 900 mv i f = 10 ma ? 1 000 mv i f = 50 ma ? 1 100 mv i f = 150 ma ? 1 250 mv i r reverse current see fig.5 v r = 75 v 0.003 5 na v r = 75 v; t j = 150 c 3 80 na c d diode capacitance f = 1 mhz; v r = 0; see fig.6 2 ? pf t rr reverse recovery time when switched from i f = 10 ma to i r = 10 ma; r l = 100 ? ; measured at i r = 1 ma; see fig.7 0.8 3 s
2003 mar 25 4 nxp semico nductors product data sheet low-leakage double diode BAV170 thermal characteristics note 1. device mounted on a fr4 printed-circuit board. symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 360 k/w r th j-a thermal resistance from junction to ambient note 1 500 k/w graphical data device mounted on a fr4 printed-circuit board. (1) single diode loaded. (2) double diode loaded. fig.2 maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 i f (ma) 200 300 0 100 200 mbg521 t amb ( o c) (1) (2) fig.3 forward current as a function of forward voltage; per diode. handbook, halfpage 0 1.6 300 0 100 200 mlb752 - 1 0.8 1.2 0.4 i f (ma) v (v) f (1) (2) (3) (1) t j = 150 c; typical values. (2) t j = 25 c; typical values. (3) t j = 25 c; maximum values.
2003 mar 25 5 nxp semico nductors product data sheet low-leakage double diode BAV170 fig.4 maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. based on square wave currents; t j = 25 c prior to surge. handbook, full pagewidth mbg704 10 t p ( s) 1 i fsm (a) 10 2 10 ? 1 10 4 10 2 10 3 10 1 v r = 75 v. (1) maximum values. (2) typical values. fig.5 reverse current as a function of junction temperature; per diode. h andbook, halfpage 10 2 10 3 150 200 50 0 mlb754 100 10 1 10 1 10 2 i r (na) t ( c) o j (1) (2) fig.6 diode capacitance as a function of reverse voltage; per diode; typical values. f = 1 mhz; t j = 25 c. handbook, halfpage 01020 15 5 2 0 1 mbg526 v r (v) c d (pf)
2003 mar 25 6 nxp semico nductors product data sheet low-leakage double diode BAV170 handbook, full pagewidth t rr (1) i f t output signal t r t t p 10% 90% v r input signal v = v i x r rf s r = 50 s ? i f d.u.t. r = 50 i ? sampling oscilloscope mga881 fig.7 reverse recovery time test circuit and waveforms.
2003 mar 25 7 nxp semico nductors product data sheet low-leakage double diode BAV170 package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot2 3
2003 mar 25 8 nxp semico nductors product data sheet low-leakage double diode BAV170 data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 613514/04/pp date of release: 2003 mar 25 document order number: 9397 750 10965
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